ELECTRICAL SCIENCE I - 2017/8
Module code: EEE1034
Electrical and Electronic Engineering
SHKUNOV M Dr (Elec Elec En)
Number of Credits
FHEQ Level 4
Module cap (Maximum number of students)
Overall student workload
Lecture Hours: 22
|Assessment type||Unit of assessment||Weighting|
|Examination||2 HOUR CLOSED-BOOK WRITTEN EXAMINATION||90%|
|Coursework||TUTORIAL PEER ASSESSMENT SCHEME||10%|
A student required to resit the TPAS unit of assessment is required to re-submit written answers to all TPAS questions relevant to the module. This re-submission is assessed by the TPAS Coordinator on a pass-fail basis only.
Prerequisites / Co-requisites
Expected prior learning: None.
Module purpose: To understand the physics and engineering that underpins the operation of semiconductor devices and to use this to understand the operation of simple bipolar devices and MOS transistors. In addition to understand the effects electric and magnetic fields and their interaction with matter within the discipline of electronic engineering.
introduce the fundamentals of electric and magnetic fields, materials and their electronic properties.
Show how the above can be used to explain the behavior of simple electronic and photonic devices
Enable students from different educational backgrounds to reach a common level of knowledge and understanding.
|Discuss bonding between elements and give some of the properties of insulators, metals and semiconductors||KC|
|Describe the main electronic properties of semiconductors and the factors that control electrical conductivity and how they can be utilised in electronic devices .||KC|
|Discuss the operation of simple devices: diode; bipolar transistor; MOS transistor||KC|
|Demonstrate the application of electrostatic models to describe fields, forces and energy on charges and in devices||KC|
|Demonstrate the application of magnetostatic models to charged particles, currents and in ferromagnetism.||KC|
C - Cognitive/analytical
K - Subject knowledge
T - Transferable skills
P - Professional/Practical skills
Indicative content includes the following.
Part A - Electronic Materials
Structure of the atom (nucleus, electrons, shells). Ionic bonding (electrostatics). Covalent bonding, Metallic bonding (free electrons). Van der Waals interactions. Band structure of insulators, metals and semiconductors. The meaning of the Fermi level.
Intrinsic (Si, Ge) and extrinsic (donor/acceptor, n-type, p-type) semiconductors, carrier concentration. Density of states. Basic band structure description of Direct/indirect semiconductors (absorption, emission, phonons). Mobility and conductivity.
Two terminal devices: p-n junctions and diodes (structure and principles of basic operation, Zener, LED, photodiode). Current transport mechanisms and the Hall effect.
Three terminal devices: basic physical principles of MOSFET and BJT Transistors, their structures, and electrical characteristics.
Transistors – Introduction to transistors (FETs and Bipolars). FET principles and types, MOSFET characteristics and simple amplifier circuits. MOSFET small signal equivalent circuit and dc biasing.
Part B - Fields and Charges
Electrostatics: Electric charge, static electricity and current/Coulomb, Fields (conception of scalar vs basic vector) and field lines. Field strength and potential, potential gradients in uniform fields. Capacitance (fields, forces, energy) and dielectrics. Coulomb’s law (test charges, force vs strength vs potential, work moving charge).
Magnetostatics: Permanent magnets (fields, attraction/repulsion etc) and dc currents (wires, solenoids etc). Magnetic field strength (solenoids, wires, left hand rule, perpendicular components etc). The ampere (definition using two parallel wires). Coil meters and dc motors. Charged particles in magnetic fields. Hall effect. Ferromagnetism (relative permeability).
Methods of Teaching / Learning
The learning and teaching strategy is designed to achieve the following aims.
The learning and teaching strategy is designed to allow the students to gain an understanding of the subject area. At the end of sections the students complete short assessments through the TPAS system and through class tests. This enables the lecturers to assess areas where there are problems. These assessments involve peer review marking are returned with explanations so that the students are aware of areas where they are encountering problems and how to solve them. Some of the assessments are by multiple choice questions while others are by longer exam style answers. The teaching uses video clips so the students can see some of the background to the areas they are studying and the processes in industry and so gain an understanding of the bigger picture in which these devices operate.
Learning and teaching methods include the following.
Lectures 2-3 lecture hours per week x 11 weeks (total 28 hours)
Class discussion and problems 0-1 hours per week (total 5 hours)
TPAS systemm of problem classes and peer review marking (total 11 hours)
The assessment strategy for this module is designed to provide students with the opportunity to demonstrate the following.
· A breadth of understanding of the underlying science that underpins the operation of 2 and 3 terminal electronic devices. An understanding of processes involved and how they combine in the manufacture of modern integrated circuits. An understanding of the interaction of electric and magnetic fields with matter.
Thus, the summative assessment for this module consists of the following.
· Written examination – 2hrs (90%)
· TPAS questions – throughout semester (10%)
Formative assessment and feedback
For the module, students will receive formative assessment/feedback in the following ways.
· During lectures, by question and answer sessions
· Through TPAS system
· Via the marking of written reports, this is used for feedback not assessment
Reading list for ELECTRICAL SCIENCE I : http://aspire.surrey.ac.uk/modules/eee1034
Please note that the information detailed within this record is accurate at the time of publishing and may be subject to change. This record contains information for the most up to date version of the programme / module for the 2017/8 academic year.